GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model

Please use this identifier to cite or link to this item: http://thuvienso.dut.udn.vn/handle/DUT/24763

DC Field	Value	Language
dc.contributor.author	Yogesh Chauhan	en_US
dc.date.accessioned	2026-08-12T02:39:59Z	-
dc.date.available	2026-08-12T02:39:59Z	-
dc.date.issued	2024	-
dc.identifier.isbn	9780323998710	-
dc.identifier.uri	https://www.sciencedirect.com/book/monograph/9780323998710/gan-transistor-modeling-for-rf-and-power-electronics	-
dc.identifier.uri	http://thuvienso.dut.udn.vn/handle/DUT/24763	-
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.title	GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model	en_US
dc.type	book	en_US
item.grantfulltext	none	-
item.languageiso639-1	en	-
item.openairetype	book	-
item.openairecristype	http://purl.org/coar/resource_type/c_2f33	-
item.fulltext	Không kèm toàn văn	-
item.cerifentitytype	Publications	-
Appears in Collections:	Kỹ thuật 2024 - Engineering 2024

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